It will build mathematical and numerical background for design of electronics circuit &Ĭomponent value. Semiconductor and components like diode, transistor, FET, MOSFET and operational amplifier This course provides the student with the fundamental skills to understand the basic of This course provide basic knowledge about electronics. All engineering students of almost every disciplines has undergo this core course.How much is electronics is needed in our everyday life is no need to mention. 572-78, 2007.Welcome to CSE 212: Basic Electronics course. Appenzeller, "Impact of dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices," ScienceDirect, vol. Probability that an electron will be at an energy state E given the fermi level, and temperature TĪppendix: Relevant functions (continue) SS= J.Potential energy effecting the DOS, and hence the transmission T.Average transmission at different energy.f: fermi functions describing number of electrons.: broadening matrices due to coupling with contacts.: self energy matrices from the contacts.E : energy matrices from the electronic band structure.electrodes are infinite electron reservoir.Include scattering (inelastic & elastic).Adjust simulation to account for experimental challenges.Link experimental results with analytical equations.In comparison to a MOSFET, high Ion/Ioff ratio and steep SS over several decades indicate GNR TFET’s superiority for ultra-low-voltage applications.Further analysis is required to balance the trade-offs among size, power, and performance.SS of 6.4 mV/dec and Ion/Ioffof >25,000 were obtained for length=40nm, width=5nm, vd=0.1 V, and doping=0.24eV.Results: varying drain bias Drain bias correlates positively with SS (linear & weak) and negatively with Ion/Ioff (exponential) Results: varying drain bias λ On q∆ Off Source Channel Drain Drain bias correlates positively with SS (linear & weak) and negatively with Ion/Ioff (exponential) Results: varying doping in contacts Channel doping correlates positively with SS (exponential) and positively with Ion/Ioff (exponential) up until doping of around 0.28eV Results: varying doping in contacts λ On q∆ Off Source Channel Drain Channel doping correlates positively with SS (exponential) and positively with Ion/Ioff (exponential) up until doping of around 0.28eV Results varying channel length Channel length varies inversely with SS and correlates positively (logarithmic) with Ion/Ioff Results: varying channel length λ On q∆ Off Source Channel Drain Result: varying channel width Channel width varies inversely with SS and correlates negatively (exponential) with Ion/Ioff
263-268, 2010 Drain-side gate underlap and drain doping reduce the ambipolar IV characteristics without sacrificing Ion/Ioff and SS Mohanram “Graphene tunneling FET and its applications in low-power circuit design,” VLSI, pp. Literature Review: varying drain-side gate underlap& drain doping X.
Iannaccone, G., "Ultralow-Voltage Bilayer Graphene Tunnel FET," Electron Device Letters, IEEE , vol.0, no.10, pp.1096,1098, Oct.
Literature Review: varying gate overlap & differential voltage Differential voltage between top and bottom gate for a double gate TFET correlates positively with Ion/Ioff Gate overlap improves SS without degrading Ion and Ioff Fiori, G. Riel, "Tunnel field-effect transistors as energy-efficient electronics switches," Nature, vol. Literature Review: MOSFET/TFET IV of different material system A.
GrapheneNanoribbon (GNR) Transmission Subbands Tunnel Field Effect Transistor (TFET) λ On q∆ Off Source Channel Drainĭevice design and simulation Gate Source Drain
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